Extraction of MOSFET LEVEL (1,2,3 and 6) SPICE parameters related to output (Id vs. Vd) characteristics 
1. What two quantities are plotted against each other on a MOSFET's forward output characteristic curve?
2. When measuring the output characteristics, which quantity is stepped and held constant for each individual curve?
3. The upward slope of the drain current in the 'saturation' region (the 'flat' part of the curve) is modeled by which SPICE parameter?
4. What physical phenomenon does the `LAMBDA` parameter account for?
5. How is the `LAMBDA` parameter (or the related Early Voltage) graphically determined from the output plot?
6. The *slope* of the output curve in the deep *linear* (or ohmic) region, near zero drain voltage, is primarily used to extract what?
7. In LEVEL 2 and 3, parameters like `VMAX` are used to model velocity saturation. How does this effect change the *shape* of the output curve compared to the simple LEVEL 1 model?
8. If the vertical spacing between output curves *decreases* at high gate voltages (for the same constant step in gate voltage), what phenomenon (modeled in LEVEL 3) is this visualizing?
9. The region of the plot at low drain voltage, where the current rises with voltage, is known as the:
10. In LEVEL 3 and 6, parasitic drain (`RD`) and source (`RS`) resistances are explicitly modeled because they are needed to accurately fit which part of the curve?