Extraction of MOSFET LEVEL (1,2,3 and 6) SPICE parameters related to output (Id vs. Vd) characteristics 
1. What two quantities are plotted against each other on a MOSFET's forward output characteristic curve?
2. When measuring the output characteristics, which quantity is stepped and held constant for each individual curve?
3. The upward slope of the drain current in the 'saturation' region (the 'flat' part of the curve) is modeled by which SPICE parameter?
4. What physical phenomenon does the `LAMBDA` parameter account for?
5. How is the `LAMBDA` parameter (or the related Early Voltage) graphically determined from the output plot?
6. The *slope* of the output curve in the deep *linear* (or ohmic) region, near zero drain voltage, represents what physical characteristic?
7. Which SPICE parameters are most critical for accurately modeling the 'on-resistance' slope in the linear region?
8. In short-channel models (LEVEL 2/3), what is the primary effect of carrier velocity saturation (`VMAX`) on the output plot?
9. How does mobility degradation (a high gate voltage effect) visually appear on the output characteristics plot?
10. What is the term for the sharp, uncontrolled increase in drain current that occurs at very high drain-source voltages, which is the final region of the plot?