Virtual Labs

a: Gate, Source and Drain b: Gate, Emitter and Collector c: Base, Emitter and Collector d: Base, Source and Drain

a: BJT b: TRIAC c: IGBT d: MOSFET

a: IG b: VGE c: IC d: VCE

a: P-N-P structure connected by a MOS gate b: N-N-P-P structure connected by a MOS gate c: P-N-P-N structure connected by a MOS gate d: N-P-N-P structure connected by a MOS gate

a: All the four are majority carrier devices b: All the four are minority carrier devices c: IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices d: MOSFET is majority carrier device, whereas IGBT, Diode Thyristor are minority carrier devices

Voltage Current Characteristics of Insulated Gate Bipolar Transistor (IGBT)