Virtual Labs

a: The IGBT is developed by combining the characteristics of a BJT and a MOSFET b: The on-state losses of an IGBT are lesser than a MOSFET c: The IGBT is slower than a BJT d: The IGBT contains a parasitic thyristor

Which of the following is a demerit of IGBT?

a: High peak current capability b: Low turn off time c: Ease of gate drive d: High turn off time

what does the term 'bias' mean?

a: a DC voltage is applied to control the operation of device b: the ratio of majority carriers to minority carriers c: the amount of current across a diode d: None of these

For a voltage controlled device like IGBT, which of the following is true?

a: Output current depends on output voltage b: Input current depends on output current c: Output current depends on input current d: Output current depends on input voltage

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