Extraction of MOSFET LEVEL (1,2,3 and 6) SPICE parameters related to gate voltage Capacitance (Cg vs. Vg) 
Aim of experiment
Extraction of MOSFET LEVEL (1,2,3 and 6) SPICE parameters related to gate voltage Capacitance (Cg vs. Vg) characteristics
The following SPICE parameters are extracted:
- TOX, Oxide Thickness
- COX, Oxide Capacitance
- NSUB, Bulk Doping Concentration