Virtual Labs

Characteristics of high frequency IGBT switching power device

1. Select the false statement:

a: IGBT has three terminals: Collector, Emitter and Gate. Explanation

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b: IGBT is a four-layer semiconductor device. Explanation

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c: IGBT allows current in either directions. Explanation

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d: IGBT has three junctions. Explanation

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2. The properties of IGBT are a combination of which of the following two devices?

a: MOSFET and SCR Explanation

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b: SCR and TRIAC Explanation

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c: MOSFET and BJT Explanation

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d: BJT and TRIAC Explanation

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3. Identify the three terminals of IGBT- collector (C), emitter (E) and gate (G) in the IGBT figure given below from left-to-right.

a: (i)- gate, (ii)- collector, (iii)- emitter Explanation

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b: (i)- collector, (ii)- emitter, (iii)- gate Explanation

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c: (i)- gate, (ii)- emitter, (iii)- collector Explanation

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d: (i)- emitter, (ii)- collector, (iii)- gate Explanation

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4. Which of the following statements is correct?

a: The ON-state losses of IGBT is lower than that of MOSFET Explanation

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b: IGBT is faster than MOSFET Explanation

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c: IGBT combines the characteristics of MOSFET and a diode Explanation

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d: IGBT is best suited for frequencies above 100 kHz applications Explanation

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5. Which of the following is the correct for IGBT from application point of view?

a: High power, high frequency Explanation

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b: High power, low frequency Explanation

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c: Low power, low frequency Explanation

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d: Low power, high frequency Explanation

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6. The correct symbolic representation of an IGBT is?

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7. Choose the correct statement.

a: IGBT is a current controlled device. Explanation

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b: IGBT is a voltage controlled device. Explanation

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c: IGBT is an uncontrolled device. Explanation

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d: IGBT is controlled using a train of firing pulses. Explanation

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8. IGBT is capable of blocking:

a: neither positive nor negative collector-to-emitter voltages. Explanation

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b: only positive collector-to-emitter voltages. Explanation

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c: only negative collector-to-emitter voltages. Explanation

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d: both positive and negative collector-to-emitter voltages. Explanation

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