Virtual Labs

Characteristics of high frequency IGBT switching power device

1. Which of the following is true for IGBT:

a: It is a minority carrier device Explanation

Explanation

b: It is a majority carrier device Explanation

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c: It is a three layer device Explanation

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d: Its lightly doped n-region is connected to its collector Explanation

Explanation

2. The transfer characteristics of IGBT is a plot between:

a: Gate-to-Emitter voltage (V_GE)-vs-Collector Current (I_C) Explanation

Explanation

b: Collector-to-Emitter voltage (V_CE) vs-Collector Current (I_C) Explanation

Explanation

c: Gate-to-Emitter voltage (V_GE)-vs- Collector-to-Emitter voltage (V_CE) Explanation

Explanation

d: Collector-to-Emitter voltage (V_CE) vs- Gate Current (I_G) Explanation

Explanation

3. An IGBT is in ON- state. It is observed that with increasing collector-to-emitter voltage (V_CE) the collector current (I_C) is almost constant. Which region is the IGBT operating in?

a: Cutoff Explanation

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b: Linear Explanation

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c: Saturation Explanation

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d: Reverse blocking Explanation

Explanation

4. When compared to MOSFET the time required to turn- OFF an IGBT is?

a: Almost equal Explanation

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b: Lower Explanation

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c: Higher Explanation

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d: Half Explanation

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5. A positive DC voltage is applied across the collector-to-emitter of an IGBT. It is then switched- ON using gate voltage. A DC current then starts flowing through the device. After sometime the gate signal is stopped. What is the status of IGBT?

a: IGBT stops conducting (Reverse blocking state). Explanation

Explanation

b: IGBT heavily conducts (Reverse breakdown). Explanation

Explanation

c: IGBT continues to conduct (Forward conducting state). Explanation

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d: IGBT stops conducting (Forward blocking state). Explanation

Explanation

6. A forward biased IGBT comes into conduction state by?

a: Allowing Collector current (I_C) Explanation

Explanation

b: Applying Collector-to-Emitter voltage (V_CE) Explanation

Explanation

c: Applying Gate-to-Emitter voltage (V_GE) Explanation

Explanation

d: Allowing Gate current (I_G) Explanation

Explanation

7. In comparison to MOSFET the losses in IGBT are?

a: Higher Explanation

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b: Lower Explanation

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c: Almost equal Explanation

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d: Double Explanation

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8. How can a conducting IGBT be brought to OFF-state?

a: By application of positive collector current (I_C) Explanation

Explanation

b: By applying negative gate current (I_G). Explanation

Explanation

c: By reducing the gate voltage (V_GE) to zero. Explanation

Explanation

d: By applying positive collector-to-emitter voltage (V_CE). Explanation

Explanation