Procedure

Fig. 1. MOS C/V curve

1. Set Material Parameters:
   • Choose the semiconductor material (Si, Ge, GaAs) for the simulation by clicking on the respective button.
   • Enter the work function of the metal gate, ϕm, in electron volts (eV).
   • Input the electron affinity of the semiconductor, χs, in eV.
2. Define Oxide Properties:
   • Enter the oxide thickness, tox, in nanometers (nm).
   • Specify the relative permittivity of the oxide, εox.
3. Set Semiconductor Parameters:
   • Specify the relative permittivity of the semiconductor, εsemi.
   • Enter the effective density of states in the conduction band, Nc, and in the valence band, Nv, in 1/cm3.
   • Set the temperature, T, in Kelvin (K).
   • Input the acceptor doping concentration, NA, in 1/cm3.
4. Calculate Energy Bandgap:
   • Use the given formula to calculate the energy bandgap, E_g, based on the temperature.
5. Submit the Parameters:
   • Click the "Submit" button to apply the parameters and perform the simulation.
6. Analyze the Results:
   • Observe the Q-V (Charge-Voltage) and C-V (Capacitance-Voltage) plots generated from the simulation.
   • Examine key parameters displayed, such as oxide capacitance (C_ox), threshold voltage (V_T), flat-band voltage (V_fb), and others.
   • Interpret the different regions in the C-V curve: accumulation, depletion, and inversion, to understand the behavior of the PMOS capacitor.