C-V characterization of PMOS capacitors 
1. What does the accumulation region in the C-V curve of a PMOS capacitor indicate?
2. How does temperature affect the threshold voltage (V_T) of a PMOS capacitor?
3. In C-V characterization, what is the main purpose of using high-frequency measurements?
4. What happens to the flat-band voltage if the gate material work function is increased?
5. What is the effect of interface trap charges on the C-V curve of a PMOS capacitor?
6. Which parameter is directly measured from the C-V curve in accumulation?
7. What kind of shift in the C-V curve indicates the presence of fixed oxide charges?
8. In a PMOS C-V characterization, what does a higher inversion capacitance indicate?
9. How can one distinguish between mobile ion contamination and interface trap charges in a C-V curve?
10. Why does the inversion capacitance in a PMOS capacitor typically appear smaller than the oxide capacitance?