Virtual Labs

C-V characterization of PMOS capacitors

1. What does the C-V characterization of a PMOS capacitor measure?

a: The current as a function of voltage Explanation

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b: The capacitance as a function of voltage Explanation

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c: The resistance as a function of current Explanation

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d: The power as a function of voltage Explanation

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2. In which region does the capacitance approach the oxide capacitance (C_ox) in a PMOS capacitor?

a: Accumulation Explanation

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b: Depletion Explanation

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c: Inversion Explanation

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d: Saturation Explanation

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3. What happens to the capacitance in the depletion region of a PMOS capacitor?

a: It increases linearly Explanation

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b: It decreases due to the formation of a depletion layer Explanation

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c: It remains constant Explanation

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d: It oscillates with the applied voltage Explanation

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4. What does the threshold voltage (V_T) indicate in the C-V characterization of a PMOS capacitor?

a: The voltage at which the capacitor begins to conduct current Explanation

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b: The voltage at which significant inversion occurs Explanation

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c: The voltage at which the oxide breaks down Explanation

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d: The voltage at which accumulation starts Explanation

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5. How does the doping concentration affect the C-V curve of a PMOS capacitor?

a: It shifts the flat-band voltage Explanation

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b: It has no effect Explanation

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c: It only affects the oxide capacitance Explanation

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d: It changes the metal work function Explanation

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6. What parameter can be extracted from the slope of the C-V curve in the depletion region?

a: Threshold voltage Explanation

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b: Oxide thickness Explanation

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c: Doping concentration Explanation

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d: Electron mobility Explanation

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7. Which of the following conditions corresponds to the inversion region of a PMOS capacitor?

a: High negative gate voltage Explanation

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b: High positive gate voltage Explanation

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c: Zero gate voltage Explanation

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d: Any applied voltage Explanation

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8. What is the significance of the flat-band voltage (V_fb) in C-V characterization?

a: It indicates the onset of inversion Explanation

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b: It corresponds to the energy band alignment between metal and semiconductor Explanation

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c: It represents the voltage at which the oxide capacitance reaches its maximum Explanation

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d: It determines the breakdown voltage of the oxide Explanation

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9. How is the oxide capacitance (C_ox) related to the oxide thickness (t_ox)?

a: Directly proportional to t_ox Explanation

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b: Inversely proportional to t_ox Explanation

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c: Independent of t_ox Explanation

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d: Exponential function of t_ox Explanation

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10. In a PMOS capacitor, what type of carriers accumulate at the semiconductor-oxide interface under a high negative gate voltage?

a: Electrons Explanation

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b: Holes Explanation

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c: Ions Explanation

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d: Photons Explanation

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