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Aim

Theory

Pretest

Procedure

Simulation

Posttest

References

Feedback

Characteristics of high frequency MOSFET switching power device.

Choose difficulty:

Beginner

Intermediate

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1. Select the false statement:

a: MOSFET has three terminals: Drain, Source and Gate. Explanation

Explanation

b: MOSFET is a three-layer semiconductor device. Explanation

Explanation

c: MOSFET has four junctions. Explanation

Explanation

d: MOSFET is a voltage controlled device. Explanation

Explanation

2. Which of the following devices is suitable for high frequency switching applications?

a: SCR Explanation

Explanation

b: TRIAC Explanation

Explanation

c: MOSFET Explanation

Explanation

d: IGBT Explanation

Explanation

3. Identify the three terminals of MOSFET- drain (D), source (S) and gate (G) in the figure given below from left-to-right.

a: (i)- gate, (ii)- drain, (iii)- source Explanation

Explanation

b: (i)- source, (ii)- drain, (iii)- gate Explanation

Explanation

c: (i)- gate, (ii)- source, (iii)- drain Explanation

Explanation

d: (i)- drain, (ii)- source, (iii)- gate Explanation

Explanation

4. Which of the following statements is correct?

a: MOSFET is a voltage controlled device Explanation

Explanation

b: Switching speed of IGBT is faster than MOSFET Explanation

Explanation

c: MOSFET is a current controlled device Explanation

Explanation

d: MOSFET is suitable for line frequency AC-DC rectifiers Explanation

Explanation

5. Which of the following is the correct for MOSFET from application point of view?

a: High power, high frequency Explanation

Explanation

b: Low power, high frequency Explanation

Explanation

c: Low power, low frequency Explanation

Explanation

d: High power, low frequency Explanation

Explanation

6. The correct symbolic representation of an MOSFET is?

Explanation

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