Virtual Labs

Characteristics of high frequency MOSFET switching power device.

1. Which of the following is true for MOSFET:

a: It is a majority carrier device Explanation

Explanation

b: It is a minority carrier device Explanation

Explanation

c: It is a four-layer device Explanation

Explanation

d: Its lightly doped n-region is connected to its collector Explanation

Explanation

2. The output characteristics of MOSFET is a plot between:

a: Gate-to-Source voltage (V_GS)-vs-Drain Current (I_D) Explanation

Explanation

b: Drain-to-Source voltage (V_DS)-vs-Drain Current (I_D) Explanation

Explanation

c: Gate-to-Source voltage (V_GS)-vs-Drain-to-Source voltage (V_DS) Explanation

Explanation

d: Drain-to-Source voltage (V_DS)-vs-Gate Current (I_G) Explanation

Explanation

3. In MOSFET, it is observed that even with increasing drain-to-source voltage (V_DS) the drain current (I_D) is negligible. Which region is the MOSFET operating in?

a: Saturation Explanation

Explanation

b: Linear Explanation

Explanation

c: Cutoff Explanation

Explanation

d: Reverse blocking Explanation

Explanation

4. When compared to IGBT the time required to turn-OFF a MOSFET is?

a: Almost equal Explanation

Explanation

b: Higher Explanation

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c: Lower Explanation

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d: Double Explanation

Explanation

5. A positive DC voltage is applied across the drain-to-source of a MOSFET. A sufficiently high gate signal is then applied. The MOSFET will be in which state?

a: MOSFET doesn’t conduct (Reverse blocking state). Explanation

Explanation

b: MOSFET conducts (Reverse breakdown). Explanation

Explanation

c: MOSFET doesn’t conduct (Forward blocking state). Explanation

Explanation

d: MOSFET starts conducting (Forward conducting state). Explanation

Explanation

6. A forward biased MOSFET comes into ON-state by?

a: Allowing Drain current (I_D) Explanation

Explanation

b: Applying Drain-to-Source voltage (V_DS) Explanation

Explanation

c: Applying Gate-to-Source voltage (V_GS) Explanation

Explanation

d: Allowing Gate current (I_G) Explanation

Explanation

7. In comparison to IGBT the losses in MOSFET are?

a: Lower Explanation

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b: Higher Explanation

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c: Almost equal Explanation

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d: Half Explanation

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8. The linear region of a MOSFET is also called as?

a: Saturation region Explanation

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b: Breakover region Explanation

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c: Inductive region Explanation

Explanation

d: Ohmic region Explanation

Explanation