Virtual Labs

Given T = 300 K, m_n = 1.08 × 10^-31 kg, m_p = 0.56 × 10^-31 kg, h = 6.626 × 10^-34 J·s, E_F = 0.4 eV, E_c = 0.2 eV, and E_v = 0.1 eV, what are the electron concentration n0 and hole concentration p0?

a: n0 = 3.5 x 10^21 m^-3, p0 = 2.3 x 10^21 m^-3 Explanation

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b: n0 = 2.5 x 10^21 m^-3, p0 = 3.0 x 10^21 m^-3 Explanation

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c: n0 = 4.1 x 10^21 m^-3, p0 = 1.8 x 10^21 m^-3 Explanation

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d: n0 = 5.2 x 10^21 m^-3, p0 = 2.7 x 10^21 m^-3 Explanation

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From the above values find intrinsic carrier concentration

a: 2.3 x 10^21 m^-3 Explanation

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b: 3.0 x 10^21 m^-3 Explanation

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c: 1.8 x 10^21 m^-3 Explanation

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d: 2.7 x 10^21 m^-3 Explanation

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The intrinsic carrier concentration of silicon is 9.65*10^15 m^-3. When p0 is found by dividing this value by n0, it is different from the p0 we calculated.Which one is more accurate?

a: p₀ calculated using the intrinsic carrier concentration formula Explanation

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b: p₀ calculated using the density of states and Fermi level formulas Explanation

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c: Both methods give the same accuracy Explanation

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d: Neither method is accurate Explanation

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In an n-type semiconductor in the extrinsic region, given that ND = 5 × 10^16 m⁻³, Nλ = 1 × 10^15 m⁻³, and ni = 9.65 × 10^15 m⁻³, what is the hole concentration p₀?

a: 1.92 × 10^13 m⁻³ Explanation

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b: 1.85 × 10^13 m⁻³ Explanation

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c: 2.01 × 10^13 m⁻³ Explanation

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d: 1.73 × 10^13 m⁻³ Explanation

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