Characteristics of Avalanche Photo Diode (APD).
The phenomenon leading to avalanche breakdown in reverse-biased diodes is known as Impact ionization. State True/False?
___________ has more sophisticated structure than p-i-n photodiode.
At high gain, avalanche buildup time ________.
Often __________ pulse shape is obtained from APD.
Fall times of 2 ns or more are common. State True/False?