Virtual Labs

1. What is one key feature of non-uniform doping that can be visualized using virtual labs?

a: Bandgap narrowing Explanation

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b: Instantaneous lattice collapse Explanation

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c: Change in built-in potential with doping profile Explanation

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d: Complete ionization at 0K Explanation

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2. Which profile represents non-uniform doping?

a: N(x) = constant Explanation

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b: N(x) = 0 Explanation

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c: N(x) = 10¹⁶ exp(−x/L) Explanation

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d: N(x) = infinity Explanation

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3. The built-in electric field created due to non-uniform doping opposes:

a: Thermal motion Explanation

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b: Electron drift Explanation

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c: Diffusion current Explanation

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d: Lattice vibration Explanation

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4. In non-uniform doping, which region shows the highest electric field?

a: Where doping is minimum Explanation

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b: Where doping is maximum Explanation

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c: At metal contact Explanation

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d: Field is constant Explanation

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5. What is the mathematical relation used to extract potential from electric field?

a: V(x) = −∫E(x) dx Explanation

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b: V(x) = E(x)/q Explanation

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c: V(x) = E(x) × x Explanation

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d: V(x) = qE(x) Explanation

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6. A non-uniformly doped semiconductor is biased externally. What happens to the built-in field?

a: It disappears completely Explanation

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b: It reverses direction Explanation

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c: It adds or subtracts with applied field Explanation

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d: It becomes magnetic Explanation

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7. In simulations, what key parameter affects the curvature of the potential profile?

a: Carrier lifetime Explanation

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b: Electric field Explanation

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c: Doping gradient Explanation

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d: Electron mass Explanation

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8. Which of the following correctly represents Poisson’s equation in 1D semiconductor context?

a: ∇·E = ρ Explanation

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b: d²V/dx² = −ρ(x)/ε Explanation

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c: J = σE Explanation

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d: E = −dρ/dx Explanation

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9. In a graded junction with non-uniform doping, the total built-in potential is calculated using:

a: Sum of drift and diffusion voltages Explanation

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b: Einstein relation Explanation

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c: Linear superposition of resistivities Explanation

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d: Band-to-band tunneling formula Explanation

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Non Uniform Doping Of Semiconductor