• Insert sample in TEM.
• Tilt the sample to align a specific crystallographic zone axis (using Kikuchi patterns or diffraction spots) for better orientation control.
• Switch the TEM to diffraction mode and obtain a selected area electron diffraction (SAED) pattern from the region of interest.
• Identify the desired diffraction spot that will highlight the defect contrast.
• After switching to imaging mode, tilt the sample slightly to achieve two-beam conditions, where only the direct beam (000) and one diffracted beam (g) are strongly excited. This amplifies the contrast caused by strain fields around defects.
• Record images in imaging mode.