Energy band gap of a semiconductor
In the experiment to determine the energy band gap of a semiconductor diode by changing the temperature while keeping the biasing voltage constant, which property will be measured?
The energy band gap of a semiconductor diode is the energy difference between:
When sufficient energy is provided by increasing the temperatue in the vicinity of semiconductor diode, what happens to electrons in the material?
What is the purpose of keeping the biasing voltage constant during the experiment?
How does the energy band gap of a semiconductor diode affect its electrical conductivity with increasing temperature?