Energy band gap of a semiconductor

In the experiment to determine the energy band gap of a semiconductor diode by changing the temperature while keeping the biasing voltage constant, which property will be measured?
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The energy band gap of a semiconductor diode is the energy difference between:
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When sufficient energy is provided by increasing the temperatue in the vicinity of semiconductor diode, what happens to electrons in the material?
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What is the purpose of keeping the biasing voltage constant during the experiment?
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How does the energy band gap of a semiconductor diode affect its electrical conductivity with increasing temperature?
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