Virtual Labs

Characteristics of controlled switching power devices

1. Select the false statement:

a: SCR has three terminals: anode, cathode and gate. Explanation

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b: SCR is a four-layer semiconductor device. Explanation

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c: SCR allows current in either directions. Explanation

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d: SCR has three junctions. Explanation

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2. Select the false statement:

a: IGBT has three terminals: Collector, Emitter and Gate. Explanation

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b: IGBT is a four-layer semiconductor device. Explanation

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c: IGBT allows current in either directions. Explanation

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d: IGBT has three junctions. Explanation

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3. The properties of IGBT are a combination of which of the following two devices?

a: MOSFET and SCR Explanation

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b: MOSFET and BJT Explanation

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c: SCR and TRIAC Explanation

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d: BJT and TRIAC Explanation

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4. SCR has a:

a: PNPN structure Explanation

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b: PNP structure Explanation

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c: NPNP structure Explanation

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d: NPN structure Explanation

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5. Identify the three terminals of SCR- anode (A), cathode (K) and gate (G) in the SCR figure given below from left-to-right.

a: (i)- cathode, (ii)- anode, (iii)- gate Explanation

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b: (i)- anode, (ii)- cathode, (iii)- gate Explanation

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c: (i)- gate, (ii)- anode, (iii)- cathode Explanation

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d: (i)- gate, (ii)- cathode, (iii)- anode Explanation

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6. In order to trigger or turn- ON a SCR, the potential difference between anode-to-cathode must be:

a: Positive Explanation

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b: Negative Explanation

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c: Zero Explanation

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d: Equal to gate-to-cathode voltage Explanation

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7. Which of the following statements differentiate the SCR from a diode?

a: It blocks current when reverse biased. Explanation

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b: It conducts when forward biased at a given gate signal. Explanation

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c: It conducts when forward biased without any gate signal. Explanation

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d: It conducts when reverse biased at a given gate signal. Explanation

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8. The correct symbolic representation of an SCR is?

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9. Choose the correct statement.

a: SCR is a fully controlled device. Explanation

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b: SCR is a semi-controlled device. Explanation

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c: SCR is a uncontrolled device. Explanation

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d: All the above statements are false. Explanation

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10. SCR is capable of blocking:

a: neither positive nor negative anode-to-cathode voltages. Explanation

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b: only positive anode-to-cathode voltages. Explanation

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c: only negative anode-to-cathode voltages. Explanation

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d: both positive and negative anode-to-cathode voltages. Explanation

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11. Which of the following statements is correct?

a: MOSFET is a voltage controlled device Explanation

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b: Switching speed of IGBT is faster than MOSFET Explanation

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c: MOSFET is a current controlled device Explanation

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d: MOSFET is suitable for line frequency AC-DC rectifiers Explanation

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12. Which of the following is the correct for MOSFET from application point of view?

a: High power, high frequency Explanation

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b: Low power, high frequency Explanation

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c: Low power, low frequency Explanation

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d: High power, low frequency Explanation

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