Carrier Density
1. Given T = 300 K, mn = 1.08 × 10-31 kg, mp = 0.56 × 10-31 kg, h = 6.626 × 10-34 J·s, EF = 0.4 eV, EC = 0.2 eV, and EV = 0.1 eV, what are the electron concentration n0 and hole concentration p0?
2. From the above values find intrinsic carrier concentration
3. At higher temperatures T>400K, in a doped n-type semiconductor, where would the Fermi level be?
4. In an n-type semiconductor in the extrinsic region, given that NND = 5 × 1016 , and ni = 9.65 × 1015 m⁻³, what is the hole concentration p₀?