References

Books

1. Ian Getreu, Modeling the Bipolar Transistor, Tektronix, Inc., 1976. (This is the definitive guide, providing practical, step-by-step methods for extracting the B-E junction parameters CJE, VJE, and MJE from reverse-bias C-V plots, and TF from forward-bias measurements.)

2. S. M. Sze and Kwok K. Ng, Physics of Semiconductor Devices, 3rd ed., Wiley, 2006. (Explains the fundamental physics of both depletion capacitance (CJE) and the diffusion capacitance (related to TF and charge storage in the base) in a forward-biased p-n junction.)

3. G. Massobrio and P. Antognetti, Semiconductor Device Modeling with SPICE, 2nd ed., McGraw-Hill, 1993. (This book connects the physics directly to the SPICE model, detailing the equations and roles of CJE, VJE, MJE, and the forward transit time TF.)

Video Lectures

• Breakdown of junction and C-V profiling
• Bipolar Junction Transistor
• BJT: small-signal model, gain and cut-off frequency