MOSFET Gate Capacitance (Cg-Vg) Extractor

1. Input Data & Extraction

Device Parameters (Assumed)

Device Area is required to extract C/cm² (COX) and Doping (NSUB) from total C (Farads).

Extracted Parameters:

Measured Gate Capacitance (Cg vs. Vg)

Extraction of MOSFET LEVEL (1,2,3 and 6) SPICE parameters related to gate voltage Capacitance (Cg vs. Vg)

TCAD Lab IITKGP

Gate Capacitance (Cg-Vg) Extraction & Simulation Results

1. Measured Data & Extracted Parameters

Vg (V)Cg (F)
Extracted Parameters (using Assumed Values):

            

2. Simulated Data & Tuned Parameters

Vg (V)Cg (F)
Tuned Parameters:

            

3. Simulated vs. Measured Gate Capacitance

Simulated vs. Measured Cg-Vg Plot