MOS Structure Visualization
Gate: 0.0V
Body: 0.0V
SiO₂ Oxide (εᵣ = 3.9)
++ Accumulation Layer ++
Depletion Region
Inversion Channel
p-type Silicon Substrate
Operation Mode
Flat-Band
Surface Potential
0.00 V
Depletion Width
0 nm
Electric Field
0 V/cm
Key Parameters
Threshold Voltage
0.70 V
Flat-Band Voltage
-0.50 V
Gate Capacitance
3.45 nF/cm²
⚙️ Simulation Controls
0.0 V
0.0 V
10¹⁶ cm⁻³
300 K