Metal-Semiconductor Junction Virtual Lab

Equilibrium

Forward/Reverse Bias

Applications

Challenges

Junction Formation & Energy Bands

Material Properties

Metal Work Function (eV)

4.5 eV

Semiconductor Type

Doping Concentration (log₁₀ cm⁻³)

10¹⁶ cm⁻³

Temperature (K)

300 K

Calculated Parameters

Schottky Barrier Height: 0.65 eV

Built-in Potential: 0.45 V

Depletion Width: 0.12 μm

Max Electric Field: 7.5×10⁴ V/cm

Biased Junction Behavior

Bias Controls

Applied Voltage (V)

0.0 V

Bias Condition

Equilibrium

Biased Parameters

Current Density: 0 A/cm²

Effective Barrier: 0.65 eV

Depletion Change: 0%

Schottky Device Applications

Performance Metrics

DC Output Voltage: 3.7 V

Ripple Factor: 121%

Efficiency: 40.6%

Application Type

Device Application

Rectifier Type

Input Signal Frequency (Hz)

60 Hz

Load Resistance (Ω)

100 Ω

Add Filter Capacitor

Capacitance (μF)

470 μF

Simulation Running

Adjust controls above to see real-time changes

Total Score

Challenges Solved

Hints Used

100%

Accuracy

Rapid Fire Quiz

Test your knowledge with quick questions about Schottky junctions

Advanced Concepts

Explore deeper concepts of metal-semiconductor junctions

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Calculation Challenge

Solve numerical problems related to Schottky junctions

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