Instructions

    1. Select the Semiconductor Material:

      Choose the semiconductor material you want to use for the simulation by clicking on one of the available options: Silicon (Si), Germanium (Ge), or Gallium Arsenide (GaAs).

    2. Input the Metal Gate Work Function (ϕm):

      Enter the work function of the metal gate in electron volts (eV). This value affects the flat-band voltage and overall C-V characteristics of the PMOS capacitor.

    3. Set the Electron Affinity of the Semiconductor (χs):

      Provide the electron affinity of the selected semiconductor in eV. This parameter is essential for calculating the flat-band voltage.

    4. Define Oxide Properties:

      Enter the thickness of the oxide layer, tox, in nanometers (nm), and specify the relative permittivity of the oxide, εox.

    5. Specify Semiconductor Parameters:
      • Enter the relative permittivity of the semiconductor, εsemi.
      • Input the effective density of states in the conduction band, Nc, and the valence band, Nv, in 1/cm3.
      • Set the temperature, T, in Kelvin (K).
      • Provide the acceptor doping concentration, NA, in 1/cm3.
    6. Calculate the Energy Bandgap (Eg):

      Use the given formula for Eg to compute the energy bandgap based on the input temperature. This calculation is crucial for determining intrinsic properties of the semiconductor.

    7. Click the "Submit" Button:

      Once all the parameters are set, click the "Submit" button to start the simulation. The system will generate the C-V and Q-V curves based on the input parameters.

    8. Analyze the Simulation Output:

      Examine the generated plots:

      • Q-V Plot: Shows the relationship between charge (Q) and applied voltage (V).
      • C-V Plot: Displays the capacitance (C) as a function of the applied voltage (V).
      Review the calculated parameters such as oxide capacitance (Cox), threshold voltage (VT), flat-band voltage (Vfb), and other relevant characteristics.

    9. Interpret the Results:

      Identify different regions of the C-V curve (accumulation, depletion, inversion) and understand their significance in terms of the PMOS capacitor's behavior. Use these observations to gain insights into the device's electrical properties.

      

ϕm  =  

eV

χs  =  

eV

tox  =  

nm

ϵox  =  

Nc(300)  =  

1/cm³

T  =  

K

\( E_g \) =

eV

\( \epsilon_{semi} \) =

\( N_v(300) \) =

1/cm³

\( N_A \) =

1/cm³

  

Q - V

Q [C/m²]

-1.25
-1.00
-0.75
-0.50
-0.25
0.00
0.25
-0.003
-0.002
-0.001
0.000
0.001
0.002
0.003
0.004
0.005

V [V]

C - V

C [F/m²]

-1.00
-0.75
-0.50
-0.25
0.00
0.000
0.002
0.004
0.006
0.008
0.010

V [V]

Eg = 1.12 eV

ni = 6.40 × 109 1/cm³

ϕs = 5.05 eV

Vfb = ϕm - ϕs = -0.972 V

0.0118 F/m²

0.0292 V