Semiconductor Device Simulation
E-field: None
Electrons: -
Holes: -
Test your quick thinking with these mobility and transport questions!
Complete the key equations and concepts related to carrier transport.
Solve numerical problems involving mobility, diffusion, and current calculations.
Deep dive into advanced mobility and transport phenomena.
Match physics concepts with their descriptions and applications.
Drift Current: Movement of carriers due to applied electric field.
Diffusion Current: Movement due to concentration gradients.
• Electric field points from + to - terminal
• Electrons move opposite to E-field
• Holes move with E-field direction
Where G is generation rate and R is recombination rate.
1. Select semiconductor material
2. Adjust temperature and voltage
3. Set doping concentrations
4. Observe carrier movement and currents
• Blue dots (e⁻): Electrons - move opposite to E-field
• Red dots (h⁺): Holes - move with E-field
• Green arrows: Electric field direction
• Gold terminals: Voltage electrodes
• Positive voltage: + terminal on right, - on left
• Electric field flows from + to -
• Electrons flow against E-field (+ to -)
• Holes flow with E-field (- to +)
Electron Drift: 1-50 mA/cm²
Electron Diffusion: 0.1-10 mA/cm²
Hole Drift: 0.1-10 mA/cm²
Hole Diffusion: 0.05-5 mA/cm²
• Higher T: ↓ drift (mobility), ↑ diffusion (thermal energy)
• Apply voltage to see drift currents
• Increase gradient slider for diffusion currents
• Try p-type doping (P > N) to see more hole current
• Different materials have different mobilities